Atomic layer deposition of Ga2O3 over a wide temperature range using a novel heteroleptic precursor (N,N-di-tert-butylacetimidamido)dimethylgallium (DBADMGa)
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날짜 2026-09-30 16:49:11
Atomic layer deposition of Ga2O3 over a wide
temperature range using a novel heteroleptic precursor (N,N-di-tert-butylacetimidamido)dimethylgallium (DBADMGa), 2026, Elsevier BV, https://doi.org/10.1016/j.apsusc.2026.167326
