Oxygen ambient annealing-driven contact engineering and channel property modulation in tungsten/InGaZnO thin-film transistors for BEOL-compatible integration
작성자 인하대
날짜 2026-07-30 15:14:17
Oxygen ambient annealing-driven contact engineering and channel property modulation in tungsten/InGaZnO thin-film transistors for BEOL-compatible integration, 2026, ELSEVIER, https://doi.org/10.1016/j.rinp.2025.108468
