Optimizing the crystallinity of ZrO2 gate insulator in indium gallium zinc oxide thin-film transistors through atomic layer deposition process temperature control
작성자 인하대
날짜 2026-07-30 10:53:47
Optimizing the crystallinity of ZrO2 gate insulator in indium gallium zinc oxide thin-film transistors through atomic layer deposition process temperature control, 2025, Nature Research, http://doi.org/10.1038/s41598-025-25938-w
