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Impact of high-pressure annealing on characteristics of InGaAs/InAlAs metamorphic high-electron mobility transistors

작성자 인하대 날짜 2026-07-30 10:47:38

Impact of high-pressure annealing on characteristics of InGaAs/InAlAs metamorphic high-electron mobility transistors, 2025, American Institute of Physics, http://doi.org/10.1063/5.0306560

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