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Oxygen ambient annealing-driven contact engineering and channel property modulation in tungsten/InGaZnO thin-film transistors for BEOL-compatible integration

작성자 인하대 날짜 2026-07-30 10:46:11

Oxygen ambient annealing-driven contact engineering and channel property modulation in tungsten/InGaZnO thin-film transistors for BEOL-compatible integration, 2025, Elsevier B.V., http;//doi.org/10.1016/j.rinp.2025.108468

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