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Interfacial p-Si doped InZnO ferroelectric FET for enhanced memory window

작성자 인하대 날짜 2026-07-30 10:39:22

Interfacial p-Si doped InZnO ferroelectric FET for enhanced memory window, 2025, American Institute of Physics, http://doi.org/10.1063/5.0288831

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