Combination-Encoding Content-Addressable Memory Utilizing the Ferroelectric Hf-Zr-O Field-Effect-Transistor Array
작성자 인하대
날짜 2026-03-12 15:48:14
Combination-Encoding Content-Addressable Memory Utilizing the Ferroelectric Hf-Zr-O Field-Effect-Transistor Array, 2025, American Chemical Society, https://doi.org/10.1021/acsaelm.4c02180
