센터성과

논문

Versatile Contact Engineering on 𝜷 -Ga2O3 Using EGaIn for Schottky Diodes and MESFET Applications

작성자 인하대 날짜 2025-11-05 10:06:53

Versatile Contact Engineering on 𝜷 -Ga2O3  Using EGaIn for Schottky Diodes and MESFET Applications, 2025, wiley advanced,  https://doi.org/10.1002/aelm.202500332