Stabilization of top-gate p-SnO transistors via ultrathin Al2O3 interlayers for hysteresis-free operation
작성자 관리자날짜 2025-07-17 15:22:26
Stabilization of top-gate p-SnO transistors via ultrathin Al2O3 interlayers for hysteresis-free operation, 2025, JOURNAL OF MATERIALS CHEMISTRY C, http://doi.org/10.1039/d5tc00399g