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Stabilization of top-gate p-SnO transistors via ultrathin Al2O3 interlayers for hysteresis-free operation

작성자 관리자 날짜 2025-07-17 15:22:26

Stabilization of top-gate p-SnO transistors via ultrathin Al2O3 interlayers for hysteresis-free operation, 2025, JOURNAL OF MATERIALS CHEMISTRY C, http://doi.org/10.1039/d5tc00399g