Design of GaN-based laser diode structures with nonuniform doping distribution in a p-AlGaN cladding layer for high-efficiency operation
작성자 관리자
날짜 2025-04-17 11:41:02
Design of GaN-based laser diode structures with nonuniform doping distribution in a p-AlGaN cladding layer for high-efficiency operation,2025,Crystals, https://doi.org/10.3390/cryst15030259
