Defect passivation of hafnium oxide ferroelectric tunnel junction using forming gas annealing for neuromorphic applications
작성자 관리자날짜 2025-04-17 11:36:53
Defect passivation of hafnium oxide ferroelectric tunnel junction using forming gas annealing for neuromorphic applications,2025,Nano Convergence, https://doi.org/10.1186/s40580-025-00481-6