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Defect passivation of hafnium oxide ferroelectric tunnel junction using forming gas annealing for neuromorphic applications

작성자 관리자 날짜 2025-04-17 11:36:53

Defect passivation of hafnium oxide ferroelectric tunnel junction using forming gas annealing for neuromorphic applications,2025,Nano Convergence, https://doi.org/10.1186/s40580-025-00481-6