Experimental demonstration of combination- encoding content-addressable memory of 0.75 bits per switch utilizing Hf–Zr–O ferroelectric tunnel junctions
작성자 관리자
날짜 2024-06-20 14:59:53
Experimental demonstration of combination-encoding content-addressable memory of 0.75 bits per switch utilizing Hf–Zr–O ferroelectric tunnel junctions,Materials Horizons, 2024, https://doi.org/10.1039/D3MH02218H
