The Effect of High-Pressure Hydrogen or Deuterium Annealing on Electrical Performance of Indium Gallium Zinc Oxide Thin-Film Transistors
작성자 관리자
날짜 2023-11-24 15:07:44
The Effect of High-Pressure Hydrogen or Deuterium Annealing on Electrical Performance of Indium Gallium Zinc Oxide Thin-Film Transistors, IEEE Transactions on Electron Devices, 2023, 10.1109/TED.2023.3241119
