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Deuterium-enabled stabilization of metal/oxide interfaces via suppressed oxygen diffusion in BEOL-compatible InGaZnO thin-film transistors

작성자 인하대 날짜 2026-07-30 15:24:55

Deuterium-enabled stabilization of metal/oxide interfaces via suppressed oxygen diffusion in BEOL-compatible InGaZnO thin-film transistors, 2026, JOURNAL OF MATERIALS CHEMISTRY C, http://doi.org/10.1039/d6tc00357e

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