Stabilization of top-gate p-SnO transistors via ultrathin Al2O3 interlayers for hysteresis-free operation
작성자 관리자
날짜 2025-05-30 14:51:44
Stabilization of top-gate p-SnO transistors via ultrathin Al2O3 interlayers for hysteresis-free operation, 2025, Journal of
Materials Chemistry C, https://doi.org/10.1039/d5tc00399g
